BC807DS T/R NXP Semiconductors, BC807DS T/R Datasheet - Page 4

• Manufacturer Part Number: BC807DS T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC807DS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC807DS,115

NXP Semiconductors
2002 Nov 22
handbook, halfpage
handbook, halfpage
PNP general purpose double transistor
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
−10
−10
B
600
500
400
300
200
100
−10
= 1 V.
= 10.
−1
−10
−10
amb
amb
amb
amb
amb
amb
0
3
2
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
I C (mA)
I C (mA)
MHC326
MHC324
−10
−10
3
3
4
handbook, halfpage
handbook, halfpage
(1) I
(2) I
(3) I
(4) I
Fig.3
V
(1) T
(2) T
(3) T
Fig.5
(mA)
(mV)
V BE
−1000
−1200
−1000
CE
I C
−800
−600
−400
−200
−800
−600
−400
−200
= 1 V.
B
B
B
B
amb
amb
amb
0
−10
= −7 mA.
= −6.3 mA.
= −5.6 mA.
= −4.9 mA.
0
= −55 °C.
= 25 °C.
= 150 °C.
−1
Collector current as a function of
collector-emitter voltage; typical values.
Base-emitter voltage as a function of
collector current; typical values.
−2
−1
(5) I
(6) I
(7) I
(8) I
(1)
(2)
(3)
(1)
(2)
(3)
B
B
B
B
−4
= −4.2 mA.
= −3.5 mA.
= −2.8 mA.
= −2.1 mA.
−10
−6
(10)
(4)
(5)
(6)
(7)
(8)
(9)
(9) I
(10) I
−10
Product data sheet
−8
BC807DS
2
B
B
I C (mA)
V CE (V)
= −1.4 mA.
= −0.7 mA.
MHC325
MHC327
−10
−10
3