BST51 /T3 NXP Semiconductors, BST51 /T3 Datasheet - Page 4

• Manufacturer Part Number: BST51 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of BST51 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 1000 at 150 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BST51,135

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 09
I
I
h
V
V
f
Switching times (between 10% and 90% levels); (see Fig.3)
t
t
amb
CES
EBO
T
on
off
SYMBOL
FE
CEsat
BEsat
NPN Darlington transistors
= 25 °C unless otherwise specified.
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
turn-on time
turn-off time
p
BST50
BST51
BST52
≤ 300 μs; δ ≤ 0.02.
PARAMETER
V
V
V
I
V
I
I
T
I
I
f = 100 MHz
I
I
C
C
C
C
C
Con
Boff
BE
BE
BE
CE
j
I
I
= 150 °C
= 0 A; V
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; V
C
C
= −0.5 mA
= 0 V; V
= 0 V; V
= 0 V; V
= 500 mA; I
= 10 V; note 1; (see Fig.2)
= 150 mA
= 500 mA
4
EB
CONDITIONS
CE
CE
CE
= 4 V
B
B
B
CE
= 45 V
= 60 V
= 80 V
= 0.5 mA
= 0.5 mA;
= 0.5 mA
Bon
= 5 V;
= 0.5 mA;
BST50; BST51; BST52
−
−
−
−
1 000
2 000
−
−
−
−
−
−
MIN.
−
−
−
−
−
−
−
−
−
200
400
1 500
TYP.
Product data sheet
50
50
50
50
−
−
1.3
1.3
1.9
−
−
−
MAX.
nA
nA
nA
nA
V
V
V
MHz
ns
ns
UNIT