BFS17T116 ROHM Semiconductor, BFS17T116 Datasheet

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BFS17T116

Manufacturer Part Number

BFS17T116

Description

Transistors Bipolar - BJT NPN RF AMP

Manufacturer

ROHM Semiconductor

Datasheet

1.BFS17T116.pdf (2 pages)

Specifications of BFS17T116

Product Category

Transistors Bipolar - BJT

Rohs

yes

Configuration

Single

Transistor Polarity

NPN

Collector- Base Voltage Vcbo

25 V

Collector- Emitter Voltage Vceo Max

15 V

Emitter- Base Voltage Vebo

2.5 V

Maximum Dc Collector Current

0.05 A

Gain Bandwidth Product Ft

1 GHz

Dc Collector/base Gain Hfe Min

20 at 2 mA at 1 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-23

Dc Current Gain Hfe Max

20 at 2 mA at 1 V

Maximum Power Dissipation

250 mW

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

3000

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Transistors

NPN small signal transistor

BFS17

1) Ideal for RF applications.

2) Mixers and oscillations in TV tuners.

3) RF communications equipment.

∗

Collector power dissipation

Junction temperature

Storage temperature

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Type

BFS17

Features

Packaging specifications

Electrical characteristics (Ta=25°C)

Absolute maximum ratings (Ta=25°C)

DC current transfer ratio

Collector-base cutoff current

Collector-emitter breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cutoff current

Transition frequency

Collector output capacitance

Collector input capacitance

Mounted on a 7

Parameter

Package

Code

Basic ordering unit (pieces)

Parameter

×

5

×

0.6 mm CERAMIC SUBSTRATE

Taping

T116

3000

Symbol

Symbol

BV

BV

BV

V

V

V

Tstg

Cob

I

I

Cib

CBO

P

CBO

CBO

CEO

I

Tj

h

EBO

f

C

T

CEO

CBO

EBO

C

FE

Min.

2.5

15

20

20

−55 to 150

5

−

−

−

−

−

Limits

0.05

0.20

0.25

150

2.5

25

15

1000

Typ.

−

−

−

−

−

−

−

−

−

Dimensions (Unit : mm)

Max.

(1)Emitter

(2)Base

(3)Collector

150

0.1

1.5

2.0

BFS17

10

−

−

−

−

−

Unit

°C

°C

W

W

V

V

V

A

MHz

Unit

µ A

pF

pF

µ A

V

V

V

−

∗

Abbreviated symbol : GMA

I

I

I

V

V

V

V

V

V

V

C

C

E

= 50 µ A

CB

CE

CE

CE

CB

CB

CB

= 1mA

= 50 µ A

0.95

( 2 )

= 10V

= 1V, I

= 1V, I

= 5V, I

= 10V, f=1MHz

= 0.5V, f=1MHz

= 10V, Ta=100 °C

( 3 )

2.9

0.4

1.9

0.95

( 1 )

C

C

C

Conditions

= 2mA

= 25mA

= 10mA

Each lead has same dimensions

0.15

0.95

0.45

BFS17

1/1

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