IS43R32800B-5BL ISSI, Integrated Silicon Solution Inc, IS43R32800B-5BL Datasheet - Page 5

• Manufacturer Part Number: IS43R32800B-5BL
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR SDRAMr

Specifications of IS43R32800B-5BL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: Mini BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 400mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Prechar ge (P RE ) [ /RAS =L , /CA S =H, /WE = L]
Auto-Ref resh (REFA ) [ /RAS =/CA S =L, /WE = CK E = H]
Activate ( ACT) [/RA S =L, /CAS =/WE =H ]
Read (R EAD) [/RAS =H , /CA S =L, /WE = H]
Write (WRITE)
IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
/CAS latency. When A8 =H at this command, the bank is deactivated after the burst read (auto-
precharge READ A )
ISSI's 256-Mbit DDR SDRAM
precharge , and auto / self refresh. E ach command is defined by control signals of /RA S, /CAS and
/WE at CLK rising edge. I n addition to 3 signals, /CS ,C KE and A8 are usedas chip select, refresh
option, and prechargeoption, respect ively. To know the detailed definition of commands, please
see the command truth table.
internally. A fter this command, the banks are precharged automatically.
(auto-precharge, WRITEA )
/write operation. When A8 =H at this command, all banks are deactivated (precharge all, PREA ).
FUNCTIONAL DESCRIPTION
AC T c ommand activates a row in an idle bank indicated by BA .
RE AD command starts burst read from the active bank indicated by BA . F irst output data appear s after
WR IT E c ommand starts burst write to the active bank indicated by BA . T otal data length to be written
is set by burst length. W hen A8 =H at this command, the bank is deactivated after the burst write
RE FA command starts auto-refresh cycle. R efresh address including bank address are generated
PR E c ommand deactivates the active bank indicated by BA . T his command also terminates burst read
/CLK
CL K
/CS
/RAS
/CAS
/WE
CK E
A8
[/RA S =H, /CAS =/WE =L ]
provides basic functions, bank (row) activate, burst read / write, bank (row)
Chip Select : L =select, H=deselect
Command
Command
Command
Refresh Option @ refresh command
Precharge Option @ precharge or read/write command
define basic commands
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