MA300E17_EVAL Infineon Technologies, MA300E17_EVAL Datasheet - Page 10

• Manufacturer Part Number: MA300E17_EVAL
• Description: Power Management IC Development Tools MOD ADPTR BRD FOR 1700V PRIMEPACK IGBT
• Manufacturer: Infineon Technologies

Module Adapter Board
for PrimePACK
FF650R17IE4
FF1000R17IE4
FF1400R17IP4
The values of R
D5, D25, D6, D26 are not needed.
External gate resistor suggested values for 1700V PrimePACK™ IGBT modules
In 1700V PrimePACK™ module types the R
must be fitted as shown on Figure 8.
Figure 8
3.3
When the IGBT transistor switches -on and –off, a high peak of the gate current must be delivered
from a driver. Usually there is no technical problem when one module is driven. If one IGBT driver is
used for modules connected in parallel the driver’s amplifier must deliver the cumulative gate current.
This switching condition leads to the gate power loss being concentrated in one relatively small
physical area and may result in thermal problems. The high peak currents also require a high current
gain driver.
Overcoming gain limitation becomes possible when the module adapter includes a dedicated gate
signal amplifier (Fig. 8, Fig. 13 and Fig. 14). MA300Exx have an emitter follower or booster stage
already implemented. With four complementary bipolar transistors connected in parallel the minimum
gain @I
Due to the fact that every PrimePACK™ has its own module adapter the driving conditions are equal.
Input resistance of the module adapter is not smaller than 37 .
Benefits provided by booster:
6
or PELINCEC2005 paper ‘Dynamic Voltage Rise Control – the Most Efficient Way to Control Turn-off Switching Behavior
of IGBT Transistors’.
7
Module
More information EPE07 paper ‘Benefits of System-oriented Module Design for High Power Inverters’,
Based on ZXTN2010Z and ZXTP2012Z bipolar transistors datasheets. www.zetex.com
Fast control of gate-emitter voltage for every PrimePACK™ module
Simple module paralleling
G
=30A is not smaller than 100
The MA300E17 with mounting direction for D5 and D25
Gate signal amplifier
Gon
R5, R6, R25, R26
1.8
1.2
0.47
and R
TM
Goff
IGBT Modules
for 1200V module types are the same and therefore assembly of diodes
7
.
R1, R2, R3, R4,
R21, R22, R23,
R24
6.8
4.7
1.8
6
Goff
is higher than R
10
Resulting R
1.7
1.18
0.47
Gon
and therefore diodes D5 and D25
Gon
Resulting R
2.6
1.78
0.68
Application Note AN 2007-06
V1.2, June 2010
Goff