MT48V8M16LFB4-8 IT:G Micron Technology Inc, MT48V8M16LFB4-8 IT:G Datasheet - Page 37
![IC SDRAM 128MBIT 125MHZ 54VFBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48V8M16LFB4-8 IT:G
Manufacturer Part Number
MT48V8M16LFB4-8 IT:G
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Specifications of MT48V8M16LFB4-8 IT:G
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
19/8/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
2.5V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 25:
Figure 26:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. L 10/07 EN
WRITE-to-PRECHARGE
Terminating a WRITE Burst
Notes:
Notes:
COMMAND
COMMAND
1. DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE
command. When truncating a WRITE burst, the input data applied coincident with the
BURST TERMINATE command will be ignored. The last data written (provided that
DQM is LOW at that time) will be the input data applied one clock previous to the
BURST TERMINATE command. This is shown in Figure 26, where data n is the last
desired data element of a longer burst.
COMMAND
1. DQMs are LOW.
t
t
WR@
WR@
ADDRESS
ADDRESS
ADDRESS
TRANSITIONING DATA
DQM
DQM
t
t
CLK
CLK
CK 15ns
CK < 15ns
DQ
DQ
DQ
BANK a,
BANK a,
BANK,
COL n
WRITE
WRITE
WRITE
COL n
COL n
D
D
D
T0
T0
n
n
n
IN
IN
IN
TERMINATE
BURST
n + 1
n + 1
NOP
NOP
T1
D
D
T1
IN
IN
t
WR
DON’T CARE
PRECHARGE
COMMAND
(ADDRESS)
(a or all)
(DATA)
BANK
T2
NOP
T2
NEXT
37
t
WR
TRANSITIONING DATA
PRECHARGE
(a or all)
BANK
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RP
NOP
NOP
T4
128Mb: x16, x32 Mobile SDRAM
t RP
BANK a,
ACTIVE
ROW
NOP
T5
DON’T CARE
BANK a,
ACTIVE
ROW
NOP
T6
©2001 Micron Technology, Inc. All rights reserved.
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