IS43R32800B-5B-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-5B-TR Datasheet - Page 25

• Manufacturer Part Number: IS43R32800B-5B-TR
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R32800B-5B-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
READ
after the /CAS La tency from the RE AD , followed by (BL-1 ) consecutive data when the Burst Le ngth
is BL . T he start address is specified by A0 -7,9, and the address seque nce of burst data is defined by
the Burst Ty pe. A RE AD command may be applied to any active bank, so the row precharge time
(tRP ) can be hidden behind continuous output data by interleaving the multiple banks. When A8 is
high at a REA D command, the auto-precharge (READA ) is performed. A ny
command(RE AD ,W RI TE,P RE ,A CT ) to the same bank is inhibited till the internal precharge is
complete. T he internal precharge starts at BL/2 after RE AD A. The next ACT command can be
issued after (BL/2+t RP ) from the previous RE AD A.
Af ter tRCD from the bank activation, a REA D command can be issued. 1st Output data is available
A0-7 ,9-11
Command
BA 0,1
/CLK
DQS
CL K
A8
DQ
AC T
Xa
Xa
00
tRCD
Mu lti B ank I nterleaving R EA D ( BL =8, C L=2)
RE AD
00
Y
0
/CAS latency
AC T
Xb
Xb
10
Qa0
Qa1
Qa2
Burst Length
RE AD
Qa3
Y
0
10
Qa4
Qa5
PR E
00
0
Qa6
Qa7
Qb0 Qb1
Qb2 Qb3
Qb4 Qb5
Qb7 Qb8
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