IS43R32800B-5B-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-5B-TR Datasheet - Page 34

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IS43R32800B-5B-TR

Manufacturer Part Number
IS43R32800B-5B-TR
Description
IC DDR SDRAM 256MBIT 144BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43R32800B-5B-TR

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
144-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
IS43R32800B
W ri te interrupted by Pr echarge
Burst write operation can be interrupted by precharge of the same or all bank. Ra ndom column
access is allowed. tWR is referenced from the first positive CL K e dgeafter the last data input.
Wr ite Interr upted by Prechar ge (B L=8, CL=2 .5)
/CLK
CL K
WR IT E
PR E
Command
A0-7 ,9-11
Yi
A8
0
00
00
BA 0,1
tWR
DM
QS
DQ
Dai0
Dai1
Integrated Silicon Solution, Inc. — www.issi.com
34
Rev. 00D
03/19/08

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