MT47H16M16BG-5E:B Micron Technology Inc, MT47H16M16BG-5E:B Datasheet - Page 38

• Manufacturer Part Number: MT47H16M16BG-5E:B
• Description: IC DDR2 SDRAM 256MBIT 5NS 84FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H16M16BG-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to V
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
TT
TT
TT
effective impedance value for 75Ω setting
effective impedance value for 150Ω setting
effective impedance value for 50Ω setting
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
SS
being tested, and then measuring current, I(V
between –40°C and 0°C (T
DDQ
TT1(EFF)
/2
and R
TT2(EFF)
are determined by separately applying V
38
C
).
Symbol
R
R
R
TT1(EFF)
TT2(EFF)
TT3(EFF)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
IH[AC]
Min
120
60
40
–6
), and I(V
Nom
150
75
50
–
IL[AC]
©2003 Micron Technology, Inc. All rights reserved.
IH(AC)
Max
180
90
60
), respectively.
6
and V
Units
%
IL(DC)
Ω
Ω
Ω
to the ball
Notes
1, 2
1, 2
1, 2
3