MT47H16M16BG-5E:B Micron Technology Inc, MT47H16M16BG-5E:B Datasheet - Page 54

• Manufacturer Part Number: MT47H16M16BG-5E:B
• Description: IC DDR2 SDRAM 256MBIT 5NS 84FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H16M16BG-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 22: Nominal Slew Rate for
Figure 23: Tangent Line for
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
V
V
V
V
V
V
V
V
Setup slew rate
falling signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
REF(DC)
REF(DC)
V
V
CK#
DDQ
CK#
DDQ
V
CK
V
t
CK
SS
IS
SS
Nominal
V
V
line
REF
REF
region
t
region
IS
=
to AC
to AC
ΔTF
V
ΔTF
REF(DC)
Tangent
- V
ΔTF
line
t IS
t IS
IL(AC)max
Setup slew rate
rising signal
Nominal
slew rate
Nominal
t IH
line
t IH
54
=
Setup slew rate
rising signal
Tangent line (V
ΔTR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ΔTR
256Mb: x4, x8, x16 DDR2 SDRAM
t IS
t IS
Nominal
slew rate
=
Tangent
IH[AC]min
ΔTR
V
V
line
REF
V
region
IH(AC)min
t IH
REF
t IH
region
to AC
Input Slew Rate Derating
to AC
- V
ΔTR
REF[DC]
- V
REF(DC)
)
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