MT48LC4M32LFF5-8:G TR Micron Technology Inc, MT48LC4M32LFF5-8:G TR Datasheet - Page 76
![IC SDRAM 128MBIT 125MHZ 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT48LC4M32LFF5-8:G TR
Manufacturer Part Number
MT48LC4M32LFF5-8:G TR
Description
IC SDRAM 128MBIT 125MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Specifications of MT48LC4M32LFF5-8:G TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (4Mx32)
Speed
125MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
19/8/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
115mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 55:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CKE
A10
CLK
DQ
Write – Full-page Burst
t CMS
t CKS
Notes:
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t CK
t RCD
1. x16: A9 and A11 = “Don’t Care.”
2.
3. Page left open; no
x32: A8, A9, and A11 = “Don’t Care.”
t
See Table 17 on page 53.
WR must be satisfied prior to PRECHARGE command.
T1
NOP
t CMS
t CL
t DS
COLUMN m 1
D
T2
WRITE
BANK
IN
t CMH
m
t CH
t DH
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
76
512 (x16) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
128Mb: x16, x32 Mobile SDRAM
IN
T5
m + 3
NOP
t DH
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t DS
D
Tn + 1
IN
NOP
m - 1
t DH
©2001 Micron Technology, Inc. All rights reserved.
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
2, 3
Tn + 3
NOP