BC858C-7 Diodes Inc., BC858C-7 Datasheet - Page 5

• Manufacturer Part Number: BC858C-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC858C-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Typical Electrical Characteristics
BC856A – BC858C
Document Number: DS112072 Rev. 22 - 2
1,000
1,000
100
100
10
10
Figure 1 Typical DC Current Gain vs. Collector Current
1
Figure 3 Gain-Bandwidth Product vs Collector Current
1
1
V
T = 25°C
CE
A
= 5V
I , COLLECTOR CURRENT (mA)
T = 150°C
C
I , COLLECTOR CURRENT (mA)
C
A
10
T = -50°C
A
10
100
(@T
V
CE
= 5V
A
= +25°C, unless otherwise specified.)
1,000
100
www.diodes.com
5 of 7
0.5
0.4
0.3
0.2
0.1
0
0.1
Figure 2 Typical Collector-Emitter Saturation Voltage
I
I
C
B
= 10
I , COLLECTOR CURRENT (mA)
C
1
T = 150°C
A
vs. Collector Current
T = 25°C
10
A
BC856A-BC858C
100
T = -50°C
A
© Diodes Incorporated
1,000
Feb. 2013