BC858C-7 Diodes Inc., BC858C-7 Datasheet - Page 6

• Manufacturer Part Number: BC858C-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC858C-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
BC856A – BC858C
Document Number: DS112072 Rev. 22 - 2
K
J
Z
F
Y
G
A
H
D
X
B C
K1
L
E
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C
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Dimensions Value (in mm)
Z
X
Y
C
E
Dim
K1
G
M
A
B
C
D
F
H
K
L

J
All Dimensions in mm
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
0°
-
SOT23
1.35
2.9
0.8
0.9
2.0
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.18
8°
-
0.915
0.535
0.400
0.40
1.30
2.40
1.83
2.90
0.05
1.00
0.55
0.11
Typ
-
BC856A-BC858C
© Diodes Incorporated
Feb. 2013