IS61LPS12836A-200B2I-TR ISSI, Integrated Silicon Solution Inc, IS61LPS12836A-200B2I-TR Datasheet - Page 18
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IS61LPS12836A-200B2I-TR
Manufacturer Part Number
IS61LPS12836A-200B2I-TR
Description
IC SRAM 4MBIT 200MHZ 119BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LPS12836A-200TQLI.pdf
(26 pages)
Specifications of IS61LPS12836A-200B2I-TR
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (128K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LPS12836A-200B2I-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
WRITE CYCLE TIMING
18
DATA
Address
DATA
ADSP
ADSC
CLK
ADV
BWE
CE2
CE2
BWx
OUT
GW
OE
CE
IN
t
t
t
High-Z
CES
CES
High-Z
CES
t
t
SS
AS
Single Write
WR1
t
ADV must be inactive for ADSP Write
DS
t
t
t
WS
WS
WS
t
t
t
t
SH
t
AH
CEH
CEH
CEH
t
KH
WR1
1a
t
KC
t
t
t
WH
WH
WH
t
DH
WR2
t
KL
BW4-BW1 only are applied to first cycle of WR2
t
WS
CE2 and CE2 only sampled with ADSP or ADSC
WR2
2a
CE Masks ADSP
Burst Write
t
AVS
t
WH
2b
t
AVH
2c
ADSP is blocked by CE inactive
2d
ADSC initiate Write
Write
WR3
WR3
3a
Integrated Silicon Solution, Inc.
Unselected
Unselected with CE2
01/07/2010
Rev. H