IS61LPS12836A-200B2I-TR ISSI, Integrated Silicon Solution Inc, IS61LPS12836A-200B2I-TR Datasheet - Page 4

• Manufacturer Part Number: IS61LPS12836A-200B2I-TR
• Description: IC SRAM 4MBIT 200MHZ 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LPS12836A-200B2I-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
119 BGA PACKAGE PIN CONFIGURATION
128K
4
Note: * A
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2, CE2
BWx (x=a-d)
BWE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
X
0
36 (TOP VIEW)
and A
V
V
V
V
V
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
NC
NC
NC
NC
DDQ
DDQ
DDQ
DDQ
DDQ
1
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Byte Write Enable
DQPc
DQPd
CE2
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
V
NC
NC
A
A
A
2
DD
MODE
BWc
BWd
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
A
A
A
A
3
ADSP
ADSC
BWE
ADV
CLK
V
GW
V
V
OE
A
A
NC
CE
NC
NC
A
4
DD
DD
DD
1
0
*
*
BWb
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
A
A
A
A
5
Symbol
OE
ZZ
MODE
NC
DQa-DQd
DQPa-Pd
V
V
Vss
DD
DDQ
DQPb
DQPa
CE2
DQb
DQb
DQb
DQb
DQa
DQa
DQa
DQa
V
NC
NC
A
A
A
6
DD
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Output Power Supply
Power Supply
Output Power Supply
Ground
V
V
V
DQa
V
DQb
DQb
DQb
DQa
DQa
DQa
DQb
NC
ZZ
DDQ
V
DDQ
NC
DDQ
DDQ
7
NC
DDQ
Integrated Silicon Solution, Inc.
01/07/2010
Rev. H