MT48H32M16LFBF-6:B Micron Technology Inc, MT48H32M16LFBF-6:B Datasheet - Page 18

• Manufacturer Part Number: MT48H32M16LFBF-6:B
• Description: IC SDRAM 512MBIT 166MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H32M16LFBF-6:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9: I
Notes 1, 5, 9, and 10 apply to all parameters and conditions; V
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Parameter/Condition
Self refresh
CKE = LOW;
Address and control inputs are stable; Da-
ta bus inputs are stable
DD7
t
CK =
Specifications and Conditions (x16 and x32)
t
CK (MIN);
Notes:
10. Values for I
1. A full initialization sequence is required before proper device operation is ensured.
2. I
3. The I
4. Address transitions average one transition every two clocks.
5. Measurement is taken 500ms after entering into this operating mode to allow tester
6. Other input signals are allowed to transition no more than once every two clocks and
7. CKE is HIGH during REFRESH command period
8. Typical values at 25˚C (not a maximum value).
9. Enables on-die refresh and address counters.
minimum cycle time and the outputs open.
quency alteration for the test condition.
measuring unit settling time.
are otherwise at valid V
ture range. All other I
DD
is dependent on output loading and cycle rates. Specified values are obtained with
DD
current will increase or decrease proportionally according to the amount of fre-
DD7
Half array, 85˚C
Half array, 45˚C
1/16 array, 85˚C
1/16 array, 45˚C
Full array, 85˚C
Full array, 45˚C
1/4 array, 85˚C
1/4 array, 45˚C
1/8 array, 85˚C
1/8 array, 45˚C
85˚C full array and partial array are guaranteed for the entire tempera-
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
DD7
IH
values are estimated.
18
or V
DD
Electrical Specifications – I
/V
IL
levels.
DDQ
Symbol
= 1.70–1.95V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
DD7
t
Low Power
RFC (MIN) else CKE is LOW.
500
250
400
220
350
205
350
205
325
200
© 2007 Micron Technology, Inc. All rights reserved.
Standard
700
390
520
310
430
275
430
275
375
250
DD
Parameters
Units
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA