MT48H32M16LFBF-6:B Micron Technology Inc, MT48H32M16LFBF-6:B Datasheet - Page 22

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MT48H32M16LFBF-6:B

Manufacturer Part Number
MT48H32M16LFBF-6:B
Description
IC SDRAM 512MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H32M16LFBF-6:B

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
10. For auto precharge mode, the precharge timing budget (
11. CLK must be toggled a minimum of two times during this period.
12. Required clocks are specified by JEDEC functionality and are not dependent on any tim-
13. Timing is specified by
14. Timing is specified by
15. Timing is specified by
16. Based on
ns reduction in slew rate. Input hold times remain unchanged. If the slew rate exceeds
4.5V/ns, functionality is uncertain.
after the first clock delay and after the last WRITE is executed.
ing parameter.
cycle rate.
t
CK (MIN), CL = 3.
Electrical Specifications – AC Operating Conditions
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t
t
t
CKS. Clock(s) specified as a reference only at minimum cycle rate.
WR plus
WR.
22
t
RP. Clock(s) specified as a reference only at minimum
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
RP) begins at
© 2007 Micron Technology, Inc. All rights reserved.
t
RP – (1 ×
t
CKns),

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