IS42S32800D-6TL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6TL Datasheet - Page 34

• Manufacturer Part Number: IS42S32800D-6TL
• Description: IC SDRAM 256MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6.5 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800D, IS45S32800D
Notes:
1) CAS latency = 2, Burst Length = Full Page
2) x32: A9, A11 = "Don't Care"
34
READ - FULL-PAGE BURST
DQM0 - DQM3
COMMAND
A0-A9, A11
BA0, BA1
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
ACTIVE
AS
AS
AS
BANK
ROW
ROW
T0
t
t
CKH
CMH
t
t
t
AH
AH
AH
t
CK
t
RCD
T1
NOP
t
t
CMS
CL
COLUMN m
BANK
READ
T2
t
CMH
t
CH
(2)
CAS Latency
NOP
T3
t
LZ
t
AC
NOP
T4
D
OUT
t
OH
each row (x4) has
1,024 locations
m
t
AC
NOP
T5
D
OUT
t
OH
m+
t
1
AC
Full page
completion
NOP
T6
D
OUT
t
t
OH
m+
AC
Full-page burst not self-terminating.
Use BURST TERMINATE command.
2
Integrated Silicon Solution, Inc. - www.issi.com
Tn+1
NOP
D
OUT
t
OH
m-
t
1
AC
BURST TERM
Tn+2
D
OUT
t
OH
m
t
AC
Tn+3
NOP
D
OUT
t
DON'T CARE
UNDEFINED
OH
m+
t
HZ
1
12/01/09
Tn+4
NOP
Rev. C