IS42S32800B-6B ISSI, Integrated Silicon Solution Inc, IS42S32800B-6B Datasheet - Page 49

• Manufacturer Part Number: IS42S32800B-6B
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800B-6B

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32800B
Integrated Silicon Solution, Inc.
Rev. F
07/21/09
Figure 17.2.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency=2)
A0-A9
BS0,1
RAS#
CAS#
DQM
WE#
CKE
CLK
CS#
A10
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
Command
Bank A
CK2
Write
DAx0 DAx1 DAx2 DAx3
CAx
Command
Activate
Bank B
RBx
RBx
Auto Precharge
Write with
Command
Bank B
DBx0 DBx1 DBx2 DBx3
CBx
Auto Precharge
Write with
Command
Bank A
DAy0
CAy
DAy1 DAy2
Command
Activate
Bank B
DAy3
RBy
RBy
Auto Precharge
Write with
Command
Bank B
DBy0 DBy1 DBy2 DBy3
CBy
Command
Activate
Bank A
RAz
RAz
Auto Precharge
Write with
DAz0 DAz1 DAz2 DAz3
Command
CAz
Bank A
49