IS42S32800B-6B ISSI, Integrated Silicon Solution Inc, IS42S32800B-6B Datasheet - Page 52

• Manufacturer Part Number: IS42S32800B-6B
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800B-6B

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32800B
52
Figure 18.3.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency=3)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ Hi-Z
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Command
Bank A
Read
CAx
Command
Activate
Bank B
RBx
RBx
Ax
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Ax+1
Ax+2
Ax-2 Ax-1
Command
Bank B
Read
CBx
Ax
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter
increments and continues
bursting beginning with the
starting address.
Ax+1
Bx
Bx+1
Bx+2 Bx+3 Bx+4 Bx+5
Integrated Silicon Solution, Inc.
Burst Stop
Command
Precharge
Command
Bank B
t
RP
Command
Activate
Bank B
RBy
RBy
07/21/09
Rev. F