MT41J64M16LA-187E:B TR Micron Technology Inc, MT41J64M16LA-187E:B TR Datasheet - Page 32

• Manufacturer Part Number: MT41J64M16LA-187E:B TR
• Description: IC DDR3 SDRAM 1GBIT 96FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J64M16LA-187E:B TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 96-FBGA
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 265mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1378-2

Figure 14: I
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_D2.fm - Rev. F 11/08 EN
Command
A[12:11]
BA[2:0]
A[9:0]
RAS#
CAS#
WE#
A10
CS#
DM
DQ
CK
ACT
DD
000
T0
0
1 Example – DDR3-800, 5-5-5, x8 (-25E)
Notes:
T1
D
D#
T2
1. Data DQ is shown, but the output buffer should be switched off (per MR1[12] = 1) to
achieve I
MR1[12] = 1). Address inputs are split into three parts.
T3
D#
3FF
3
T4
D
Electrical Specifications – I
OUT
T5
RD
= 0mA (MR1[12] = 0 is reflected in this example; however, test conditions are
T6
D#
T7
D#
000
0
I
DD
T8
32
D
1 measurement loop
T9
D
0
T10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D#
0
T11
0 1 1 0 0 1
D#
DD
3FF
1Gb: x4, x8, x16 DDR3 SDRAM
3
T12
Specifications and Conditions
D
T13
D
1
T14
D#
©2006 Micron Technology, Inc. All rights reserved.
T15
PRE
000
0
T16
D
T17
D
T18
D# D#
3FF