IS42S32160B-75TL-TR ISSI, Integrated Silicon Solution Inc, IS42S32160B-75TL-TR Datasheet - Page 20

• Manufacturer Part Number: IS42S32160B-75TL-TR
• Description: IC SDRAM 512MBIT 133MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160B-75TL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 125mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160B
DC RECOMMENDED OPERATING CONDITIONS
Notes:
1. All voltages are referenced to V
2. V
3. V
20
I
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
(At T
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
Symbol
V
V
V
V
I
P
T
T
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
IH
IL
O
Symbol
Symbol
OPT
STG
DD
DDQ
I
O
D
(undershoot): V
A
(overshoot): V
V
C
V
C
V
C
V
= 0 ~ 70°C, V
DDQ
CLK
DD
I
IH
IL
IN
/
O
IH
IL
(max) = V
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Parameter
Parameter
Input Capacitance, address & control pin
I
Data Input/Output Capacitance
(min) = - 2V (pulse width 3ns)
nput Capacitance, CLK pin
Parameters
Supply Voltage (with respect to V
Supply Voltage for Output (with respect to V
Input Voltage
Output Voltage
Short circuit output current
Power Dissipation (
Operating Temperature
Storage Temperature
DD
= V
DD
SS
DDQ
=0V
+ 2V (pulse width 3ns)
= 3.3 ± 0.3V, V
(with respect to V
(with respect to V
T
A
= 25 °C)
(1)
SS
= V
SS
SS
SSQ
)
Com.
Ind.
SSQ
)
)
= 0V , unless otherwise noted)
Min.
-0.3
3.0
3.0
2.0
SSQ
)
Integrated Silicon Solution, Inc. — www.issi.com
–1.0 to V
–0.5 to V
Typ.
Min.
2.5
2.5
4.0
3.3
-40 to +85
3.3
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
—
—
0 to +70
Rating
50
1
DDQ
DD
+0.5
V
+0.5
DD
Max.
Max.
3.6
3.6
3.5
3.8
+0.8
6.0
+ 0.3
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
V
V
pF
pF
pF
V
V
I
Rev. 00C
03/27/08
®