PESD24VU1UT T/R NXP Semiconductors, PESD24VU1UT T/R Datasheet - Page 6

• Manufacturer Part Number: PESD24VU1UT T/R
• Description: TVS Diode Arrays 24V ESD PROTECTION
• Manufacturer: NXP Semiconductors
• Series: PESDxU1UTr

Specifications of PESD24VU1UT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 27.8 V
• Clamping Voltage: 76 V
• Operating Voltage: 24 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 1.5 pF
• Dimensions: 1.4(Max) mm W x 3(Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 200 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD24VU1UT,215

NXP Semiconductors
PESDXU1UT_SER_2
Product data sheet
Fig 3.
V
CL
V-I characteristics
V
BR
V
RWM
P-N
+
I
I
I
I
RM
R
PP
006aaa407
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
V
Fig 4.
I
R(25˚C)
I
10
R
10
1
1
100
PESD3V3U1UT; PESD5V0U1UT
I
PESD12VU1UT; PESD15VU1UT; PESD24VU1UT
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
R
is less than 10 nA at 150 C for:
PESDxU1UT series
50
0
50
© NXP B.V. 2009. All rights reserved.
100
006aaa442
T
j
( C)
150
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