IS61VPS25636A-200TQI ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQI Datasheet - Page 13

• Manufacturer Part Number: IS61VPS25636A-200TQI
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
OPERATINg RANgE (IS61LPSxxxxx)
OPERATINg RANgE (IS61VPSxxxxx)
OPERATINg RANgE (IS64LPSxxxxx)
DC ELECTRICAL CHARACTERISTICS
Integrated Silicon Solution, Inc.
Rev. K
01/19/10
Symbol
V
V
V
V
I
I
lI
lO
Range
Commercial
Industrial
Range
Commercial
Industrial
Range
Automotive
Oh
Ol
Ih
Il
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current Vss ≤ V
Ambient Temperature
Ambient Temperature
Ambient Temperature
–40°C to +125°C
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
0°C to +70°C
Test Conditions
I
I
I
I
Vss ≤ V
OE = V
Oh
Oh
Ol
Ol
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
Ih
IN
OuT
≤ V
(Over Operating Range)
≤ V
dd
3.3V + 5%
3.3V + 5%
2.5V + 5%
3.3V + 5%
2.5V + 5%
ddq
(1)
V
V
V
,
DD
DD
DD
Min.
-0.3
2.4
2.0
—
-5
-5
3.3V
V
3.3V / 2.5V + 5%
3.3V / 2.5V + 5%
3.3V / 2.5V + 5%
dd
Max.
0.4
0.8
—
2.5V + 5%
2.5V + 5%
5
5
+ 0.3
V
V
V
DDq
DDq
DDq
Min.
-0.3
2.0
1.7
—
-5
-5
2.5V
V
dd
Max.
0.4
0.7
—
5
5
+ 0.3
Unit
µA
µA
V
V
V
V
13