IS61VPS25636A-200TQI ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQI Datasheet - Page 14

• Manufacturer Part Number: IS61VPS25636A-200TQI
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
14
Symbol Parameter
I
I
I
cc
sb
sbI
V
ss
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
cMOs Input
dd
– 0.2V.
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
All Inputs ≤ 0.2V or
≥ V
≥V
f = 0
dd
dd
IN
dd
≤ V
dd
= Max.,
= Max.,
– 0.2V
Il
– 0.2V,
Ih
ss
, f = Max.
, ZZ ≤ V
+ 0.2V or
Il
kc
or ≥ V
Il
min.
,
Ih
,
(1)
Temp. range
(Over Operating Range)
dd
Com.
Com.
A
Com.
Auto.
Auto.
uTO
Ind.
Ind.
Ind.
or V
.
ss
. It exhibits ±100µA maximum leakage current when tied to ≤
275
300
150
150
100
105
x18
-250
MAx
275
300
150
150
100
105
x36
250
275
150
150
100
105
x18
-200
MAx
Integrated Silicon Solution, Inc.
250
275
150
150
100
105
x36
225 225
250 250
300 300
150 150
150 150
200 200
100 100
105 105
130 130
x18 x36
-166
MAx
Unit
01/19/10
mA
mA
mA
Rev. K