IS61NVP51236-200TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NVP51236-200TQI-TR Datasheet - Page 11

• Manufacturer Part Number: IS61NVP51236-200TQI-TR
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NVP51236-200TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
LINEAR BURST ADDRESS TABLE
ABSOLUTE MAxIMUM RATINgS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precau-
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATINg RANgE (IS61NLPx)
Range
Commercial
Industrial
OPERATINg RANgE (IS61NVPx)
Range
Commercial
Industrial
Integrated Silicon Solution, Inc. — www.issi.com
Rev. M
01/06/2011
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
tions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
Symbol
T
P
I
V
V
ouT
STG
d
In
In
, V
A1', A0' = 1,1
ouT
Ambient Temperature
Ambient Temperature
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to V
Voltage Relative to V
for Address and Control Inputs
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
0,0
1,0
(1)
SS
SS
(MODE = V
for I/O Pins
for
3.3V ± 5%
3.3V ± 5%
2.5V ± 5%
2.5V ± 5%
0,1
V
V
SS
DD
DD
)
–0.5 to V
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
–65 to +150
–0.3 to 4.6
2.5V ± 5%
2.5V ± 5%
Value
100
V
V
1.6
DDq
DDq
ddq
+ 0.3
Unit
mA
°C
W
V
V
11