IS61NVP51236-200TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NVP51236-200TQI-TR Datasheet - Page 16

• Manufacturer Part Number: IS61NVP51236-200TQI-TR
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NVP51236-200TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SLEEP MODE ELECTRICAL CHARACTERISTICS
Symbol
I
t
t
t
t
SLEEP MODE TIMINg
16
IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
Sb
PdS
PuS
ZZI
rZZI
2
CLK
ZZ
Isupply
All Inputs
(except ZZ)
Outputs
(Q)
Parameter
Current during SLEEP MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SLEEP current
ZZ inactive to exit SLEEP current
Deselect or Read Only
ZZ setup cycle
t
ZZI
t
PDS
I
SB2
High-Z
Conditions
ZZ ≥ V
Integrated Silicon Solution, Inc. — www.issi.com
Ih
Min.
2
2
2
0
t
Deselect or Read Only
RZZI
ZZ recovery cycle
t
PUS
Max.
60
Don't Care
operation
Normal
cycle
cycle
cycle
cycle
Unit
mA
ns
01/06/2011
Rev. M