M25P05-AVMN6TP NUMONYX, M25P05-AVMN6TP Datasheet - Page 20

• Manufacturer Part Number: M25P05-AVMN6TP
• Description: IC FLASH 512KBIT 50MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P05-AVMN6TP

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 512K (64K x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Package: 8SO N
• Cell Type: NOR
• Density: 512 Kb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 256Byte x 256
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P05-AVM6TPTR; M25P05-AVMN6TP; M25P05-AVMN6TPTR

Instructions
6.2
20/52
Write disable (WRDI)
The write disable (WRDI) instruction
The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The write enable latch (WEL) bit is reset under the following conditions:
Figure 8.
Power-up
Write disable (WRDI) instruction completion
Write status register (WRSR) instruction completion
Page program (PP) instruction completion
Sector erase (SE) instruction completion
Bulk erase (BE) instruction completion.
Write disable (WRDI) instruction sequence
S
C
D
Q
High Impedance
0
(Figure
1
2
Instruction
8) resets the write enable latch (WEL) bit.
3
4
5
6
7
AI03750D
M25P05-A