M45PE10-VMP6TG NUMONYX, M45PE10-VMP6TG Datasheet - Page 39

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M45PE10-VMP6TG

Manufacturer Part Number
M45PE10-VMP6TG
Description
IC FLASH 1MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M45PE10-VMP6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M45PE10-VMP6TG
M45PE10-VMP6TGTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M45PE10-VMP6TG
Manufacturer:
ST
Quantity:
20 000
M45PE10
Table 14.
1. Delivery of parts in T9HX process to start from August 2007.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. n = number of bytes to program. int(A) corresponds to the upper integer part of A. Examples: int(1/8) = 1, int(16/8) = 2,
Symbol
t
t
SHQZ
t
RLRH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
WHSL
SHWL
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
SHRH
PW
CH
SLCH
CHSL
SHSL
DP
RHSL
CL
PP
int(17/8) = 3.
t
t
CH
f
f
PE
SE
C
R
(2)
(2)
(3)
(4)
(4)
(3)
(3)
+ t
(3)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
REC
CLH
RST
CLL
DIS
HO
f
DH
t
C
AC characteristics (50 MHz operation)
V
Clock frequency for the following instructions:
FAST_READ, PW, PP, PE, SE, DP, RDP,
WREN, WRDI, RDSR, RDID
Clock frequency for read instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output valid
Output hold time
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby mode
Reset pulse width
Reset recovery time
Chip should have been deselected before
Reset is de-asserted
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Test conditions specified in
(3)
50 MHz operation for T9HX technology
Parameter
(peak to peak)
C
.
Table 8
Min.
D.C.
D.C.
100
100
0.1
50
9
9
5
5
2
5
5
5
0
and
Table 9
(1)
int(n/8) × 0.025
Typ.
0.8
1.5
11
10
DC and AC parameters
Max.
50
33
30
10
10
23
20
8
8
3
3
3
5
MHz
MHz
V/ns
Unit
39/47
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
ns
s

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