M25P40-VMN6TPB NUMONYX, M25P40-VMN6TPB Datasheet - Page 20
![IC FLASH 4MBIT 75MHZ 8SOIC](/photos/7/28/72827/m25p40-vmn6tp_sml.jpg)
M25P40-VMN6TPB
Manufacturer Part Number
M25P40-VMN6TPB
Description
IC FLASH 4MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P40-VMP6G.pdf
(61 pages)
Specifications of M25P40-VMN6TPB
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P40-VMN6TPBTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON
Quantity:
21 000
Company:
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON
Quantity:
11 200
Company:
Part Number:
M25P40-VMN6TPB
Manufacturer:
Numonyx
Quantity:
22 500
Company:
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON44
Quantity:
18 188
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON
Quantity:
20 000
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Write Disable (WRDI)
The Write Disable (WRDI) instruction
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 8.
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Write Disable (WRDI) instruction sequence
S
C
D
Q
(Figure
High Impedance
0
1
2
8) resets the Write Enable Latch (WEL) bit.
Instruction
3
4
5
6
7
AI03750D