M25PE40-VMP6TG NUMONYX, M25PE40-VMP6TG Datasheet - Page 39
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M25PE40-VMP6TG
Manufacturer Part Number
M25PE40-VMP6TG
Description
IC FLASH 4MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25PE40-VMN6TP.pdf
(62 pages)
Specifications of M25PE40-VMP6TG
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE40-VMP6TG
M25PE40-VMP6TGTR
M25PE40-VMP6TGTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25PE40-VMP6TG
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M25PE40-VMP6TG
Manufacturer:
MICRON
Quantity:
20 000
M25PE40
6.15
Note:
Bulk Erase (BE)
The Bulk Erase (BE) instruction is decoded only in the M25PE40 in the T9HX process (see
Important note on page
The Bulk Erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
Any Bulk Erase (BE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A Bulk Erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (hardware or
software protection).
If Reset (Reset) is driven Low while a Bulk Erase (BE) cycle is in progress, the Bulk Erase
cycle is interrupted and data may not be erased correctly (see
a Reset Low
t
For the value of t
AC
Figure 21. Bulk Erase (BE) instruction sequence
RHSL
parameters.
is then required before the device can be re-selected by driving Chip Select (S) Low.
pulse). On Reset going Low, the device enters the Reset mode and a time of
RHSL
S
C
D
see
6).
Table 24: Timings after a Reset Low pulse
0
Figure
1
2
Instruction
21.
3
4
5
6
7
Table 12: Device status after
AI03752D
BE
) is initiated. While the
in
Section 11: DC and
Instructions
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