M28W160CB70N6F NUMONYX, M28W160CB70N6F Datasheet - Page 37

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M28W160CB70N6F

Manufacturer Part Number
M28W160CB70N6F
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M28W160CB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M28W160CB70N6F
Manufacturer:
ST
Quantity:
3 000
Table 29. Device Geometry Definition
Offset Word
Mode
2Ch
2Ah
2Bh
27h
28h
29h
2Dh
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
2Eh
2Fh
30h
31h
32h
33h
34h
001Eh
001Eh
0015h
0001h
0000h
0002h
0000h
0002h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
Region 1 Information
Number of identical-size erase block = 001Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase block = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 001Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
n
in number of bytes
Description
M28W160CT, M28W160CB
n
64 KByte
64 KByte
2 MByte
8 KByte
8 KByte
Async.
Value
x16
31
31
4
2
8
8
37/50

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