M29W160EB70N3F NUMONYX, M29W160EB70N3F Datasheet - Page 37

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M29W160EB70N3F

Manufacturer Part Number
M29W160EB70N3F
Description
IC FLASH 16MBIT 70NS 3V 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W160EB70N3F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
48-TSOP
Cell Type
NOR
Density
16Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 125C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 19. Programmer Equipment Block Protect Flowchart
Note: 1. Address Inputs A19-A12 give the address of the block that is to be protected. It is imperative that they remain stable during the
2. During the Protect and Verify phases of the algorithm, Chip Enable E must be kept Low, V
operation.
ADDRESS = BLOCK ADDRESS
A0, A6 = V IL ,
G, A9 = V ID ,
Read DATA
E, G = V IH ,
Wait 100µs
E, G = V IH
W = V IL
E = V IL
Wait 60ns
A1 = V IH
A9 = V IH
Wait 4µs
Wait 4µs
W = V IH
W = V IH
G = V IL
START
E = V IL
DATA
PASS
n = 0
01h
=
YES
(1)
(1)
NO
E, G = V IH
A9 = V IH
FAIL
= 25
++n
YES
NO
M29W160ET, M29W160EB
IL
.
AI03469b
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