M25P32-VMP6G NUMONYX, M25P32-VMP6G Datasheet - Page 38

IC FLASH 32MBIT 75MHZ 8VFQFPN

M25P32-VMP6G

Manufacturer Part Number
M25P32-VMP6G
Description
IC FLASH 32MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P32-VMP6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Package
8VFQFPN EP
Cell Type
NOR
Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 64
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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8
9
38/54
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
Maximum rating
Stressing the device outside the ratings listed in
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the Operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 9.
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly) and the European
2. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Symbol
directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
T
T
V
V
V
LEAD
V
STG
ESD
CC
PP
IO
Absolute maximum ratings
Storage temperature
Lead temperature during soldering
Input and output voltage (with respect to Ground)
Supply voltage
Fast Program/Erase voltage
Electrostatic Discharge Voltage (Human Body model)
Parameter
Table 9
may cause permanent damage to
(2)
–2000
Min.
–0.6
–0.6
–0.2
–65
see
V
Max.
2000
10.0
150
0.6
4.0
CC
(1)
+
Unit
°C
°C
V
V
V
V

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