M28W160CB70N6E NUMONYX, M28W160CB70N6E Datasheet - Page 36

• Manufacturer Part Number: M28W160CB70N6E
• Description: IC FLASH 16MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M28W160CB70N6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Memory Configuration: 1M X 16
• Ic Interface Type: Parallel
• Access Time: 70ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M28W160CT, M28W160CB
Table 28. CFI Query System Interface Information
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Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C6h
00B4h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
V
V
V
V
Typical time-out per single word program = 2
Typical time-out for Double Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for Double Word Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
times typical
n
n
n
µs
µs
ms
n
n
times typical
times typical
512µs
512µs
Value
11.4V
12.6V
16µs
16µs
2.7V
3.6V
NA
NA
1s
8s