M28W160ECB70ZB6E NUMONYX, M28W160ECB70ZB6E Datasheet - Page 23

• Manufacturer Part Number: M28W160ECB70ZB6E
• Description: IC FLASH 16MBIT 70NS 46TFBGA
• Manufacturer: NUMONYX

Specifications of M28W160ECB70ZB6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 46-TFBGA
• Package: 46TFBGA
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 31
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 9. Read Mode AC Waveforms
Table 15. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
t
t
t
t
t
t
t
Symbol
t
t
EHQX
GHQX
GHQZ
AXQX
EHQZ
ELQV
ELQX
GLQV
GLQX
t
t
AVQV
AVAV
DQ0-DQ15
2. G may be delayed by up to t
A0-A19
(2)
(1)
(1)
(1)
(1)
(2)
(1)
E
G
(1)
(1)
t
t
t
ACC
t
t
t
t
t
Alt
t
t
OLZ
t
OH
OH
OH
RC
HZ
CE
DF
OE
LZ
Address Valid to Next Address Valid
Address Valid to Output Valid
Address Transition to Output Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
CHIP ENABLE
ADDR. VALID
ELQV
- t
GLQV
Parameter
tGLQX
tAVQV
tELQX
after the falling edge of E without increasing t
tELQV
OUTPUTS
ENABLED
tGLQV
tAVAV
VALID
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
DATA VALID
VALID
70
70
70
20
70
20
20
0
0
0
0
0
M28W160ECT, M28W160ECB
ELQV
85
85
85
20
85
20
20
M28W160EC
0
0
0
0
0
.
tEHQX
90
tGHQX
90
90
90
25
25
30
tEHQZ
0
0
0
0
0
STANDBY
tGHQZ
100
100
100
100
30
30
35
0
0
0
0
0
tAXQX
AI03813b
Unit
23/50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns