M27C801-100B1 STMicroelectronics, M27C801-100B1 Datasheet - Page 16

IC OTP 8MBIT 100NS 32DIP

M27C801-100B1

Manufacturer Part Number
M27C801-100B1
Description
IC OTP 8MBIT 100NS 32DIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C801-100B1

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
8M (1M x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (0.600", 15.24mm)
Organization
1Mx8
Interface Type
Parallel
In System Programmable
External
Access Time (max)
100ns
Package Type
PDIP
Reprogramming Technique
OTP
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Supply Current
50mA
Pin Count
32
Mounting
Through Hole
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA
Current, Operating
35 mA
Current, Output, Leakage
±10
Current, Supply
35 mA (Max.)
Density
8M
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
100 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V
Voltage, Input, Low Level
0.80 V (Max.)
Voltage, Output, High
3.6 V (TTL), 4.3 V (CMOS)
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V
Access Time
45ns
Low Power Consumption
- Active current 35mA at 5 MHz - Standby current 100 μA
Programming Voltage
12.75 V ± 0.25 V
Memory Configuration
1M X 8
Supply Voltage Range
4.5V To 5V
Memory Case Style
DIP
No. Of Pins
32
Rohs Compliant
Yes
Operating Temperature Range
0°C To +70°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1687-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M27C801-100B1
Manufacturer:
ST
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53
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M27C801-100B1
Manufacturer:
ICS
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6 107
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M27C801-100B1
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ST
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1 000
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Manufacturer:
ST
0
Part Number:
M27C801-100B1
Manufacturer:
ST
Quantity:
20 000
M27C801
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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