M27C801-100B1 STMicroelectronics, M27C801-100B1 Datasheet - Page 14

• Manufacturer Part Number: M27C801-100B1
• Description: IC OTP 8MBIT 100NS 32DIP
• Manufacturer: STMicroelectronics

Specifications of M27C801-100B1

• Format - Memory: EPROMs
• Memory Type: OTP EPROM
• Memory Size: 8M (1M x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (0.600", 15.24mm)
• Organization: 1Mx8
• Interface Type: Parallel
• In System Programmable: External
• Access Time (max): 100ns
• Package Type: PDIP
• Reprogramming Technique: OTP
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Supply Current: 50mA
• Pin Count: 32
• Mounting: Through Hole
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA
• Current, Operating: 35 mA
• Current, Output, Leakage: ±10
• Current, Supply: 35 mA (Max.)
• Density: 8M
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 100 ns
• Time, Fall: ≤20 ns
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V
• Voltage, Input, Low Level: 0.80 V (Max.)
• Voltage, Output, High: 3.6 V (TTL), 4.3 V (CMOS)
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 5 V
• Access Time: 45ns
• Low Power Consumption: - Active current 35mA at 5 MHz - Standby current 100 μA
• Programming Voltage: 12.75 V ± 0.25 V
• Memory Configuration: 1M X 8
• Supply Voltage Range: 4.5V To 5V
• Memory Case Style: DIP
• No. Of Pins: 32
• Rohs Compliant: Yes
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1687-5

DC and AC characteristics
14/24
Figure 6.
Table 6.
1. T
2. Sampled only, not 100% tested.
Table 7.
1. T
2. V
3. Maximum DC voltage on Output is V
Symbol
V
I
I
V
V
Symbol
I
IH
I
CC1
CC2
I
V
I
CC
LO
PP
A
OH
A
CC
C
LI
OL
IL
C
(3)
= 25 °C, f = 1 MHz.
= 0 to 70 °C or –40 to 85 °C; V
OUT
IN
must be applied simultaneously with or before V
Input leakage current
Output leakage current
Supply current
Supply current (Standby) TTL
Supply current (Standby)
CMOS
Program current
Input low voltage
Input high voltage
Output low voltage
Output high voltage TTL
Output high voltage CMOS
AC testing load circuit
Capacitance
Read mode DC characteristics
Input capacitance
Output capacitance
Parameter
Parameter
C L = 30pF for High Speed
C L = 100pF for Standard
C L includes JIG capacitance
(1) (2)
DEVICE
UNDER
TEST
CC
CC
= 5 V ± 10%.
+0.5V.
Test condition
I
OUT
V
E = V
1.3V
V
OUT
IN
Test condition
0V V
E > V
I
0V V
= 0 mA, f = 5 MHz
PP
(1) (2)
OH
I
I
= 0 V
OL
OH
V
= 0 V
IL
1N914
3.3k
PP
and removed simultaneously or after V
E = V
= –100 µA
, GV
= 2.1 mA
C L
= –1 mA
CC
OUT
IN
= V
– 0.2V
PP
IH
V
CC
V
CC
= V
CC
IL
OUT
,
AI01823B
Min.
V
CC
Min.
–0.3
3.6
2
– 0.7
Max.
12
6
V
Max.
CC
±10
±10
100
0.8
0.4
35
10
PP
1
+ 1
.
M27C801
Unit
pF
pF
Unit
mA
mA
V
V
V
V
V
A
A
A
A