RC48F4400P0VB0EJ NUMONYX, RC48F4400P0VB0EJ Datasheet - Page 49

• Manufacturer Part Number: RC48F4400P0VB0EJ
• Description: IC FLASH 256MBIT 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of RC48F4400P0VB0EJ

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 512M (32Mx16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

P30-65nm
Figure 17: Reset Operation Waveforms
12.3
Datasheet
49
(A) Reset during
(B) Reset during
(C) Reset during
(D) VCC Power-up to
read mode
program or block erase
P1 ≤ P2
program or block erase
P1 ≥ P2
RST# high
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power
supply current considerations are 1) standby current levels, 2) active current levels,
and 3) transient peaks produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the
device enable charge-pumps, and internal logic states change at high speed. All of
these internal activities produce transient signals. Transient current magnitudes depend
on the device outputs’ capacitive and inductive loading. Two-line control and correct
de-coupling capacitor selection suppress transient voltage peaks.
Because flash memory devices draw their power from VCC, VPP, and VCCQ, each power
connection should have a 0.1 µF ceramic capacitor to ground. High-frequency,
inherently low-inductance capacitors should be placed as close as possible to package
leads.
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor
should be placed between power and ground close to the devices. The bulk capacitor is
meant to overcome voltage droop caused by PCB trace inductance.
RST# [P]
RST# [P]
RST# [P]
V
CC
V
V
V
V
V
V
V
0V
CC
IH
IL
IH
IL
IH
IL
P1
P2
P2
P3
Complete
Abort
Complete
Abort
Order Number: 320002-10
R5
R5
R5
Mar 2010