PSD834F2-70M STMicroelectronics, PSD834F2-70M Datasheet - Page 79
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PSD834F2-70M
Manufacturer Part Number
PSD834F2-70M
Description
IC FLASH 2MBIT 70NS 52QFP
Manufacturer
STMicroelectronics
Datasheet
1.PSD813F2VA-20JI.pdf
(109 pages)
Specifications of PSD834F2-70M
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
52-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2005
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSD834F2-70M
Manufacturer:
Samsung
Quantity:
6 000
Company:
Part Number:
PSD834F2-70M
Manufacturer:
STMicroelectronics
Quantity:
10 000
Note: 1. Reset (RESET) has hysteresis. V
Figure 40. Input to Output Disable / Enable
V
V
V
V
I
I
I
(Note
I
(Note
Symbol
LI
LO
CC
CC
HYS
LKO
OL
OH
(DC)
(AC)
2. CSI deselected or internal PD is active.
3. PLD is in non-Turbo mode, and none of the inputs are switching.
4. Please see
5. I
5
5
)
)
OUT
Reset Pin Hysteresis
V
Program
Output Low Voltage
Output High Voltage
Input Leakage Current
Output Leakage Current
Operating
Supply
Current
PLD AC Adder
Flash memory AC Adder
SRAM AC Adder
= 0mA
CC
(min) for Flash Erase and
Figure 36., page 72
ENABLE/DISABLE
Parameter
INPUT TO
OUTPUT
PLD Only
Flash memory
SRAM
INPUT
for the PLD current calculation.
IL1
is valid at or below 0.2V
Doc ID 10552 Rev 3
I
I
OH
I
OH
I
OL
OL
During Flash memory
Read only, f = 0 MHz
PLD_TURBO = Off,
PLD_TURBO = On,
WRITE/Erase Only
f = 0 MHz (Note
= –20µA, V
= –1mA, V
0.45 < V
= 20µA, V
V
= 4mA, V
SS
Conditions
f = 0 MHz
f = 0 MHz
tER
< V
IN
IN
CC
CC
CC
CC
< V
CC
< V
–0.1. V
= 3.0 V
= 3.0 V
= 3.0 V
= 3.0 V
CC
CC
3
)
IH1
is valid at or above 0.8V
tEA
Min.
–10
0.3
1.5
2.9
2.7
–1
PSD813F2V, PSD854F2V
note
Typ.
±0.1
0.01
0.15
2.99
200
2.8
1.5
0.8
±5
10
0
0
0
AI02863
CC
4
.
Max.
0.45
400
2.2
0.1
2.0
1.5
10
25
1
0
0
µA/PT
µA/PT
79/109
MHz
MHz
Unit
mA/
mA/
mA
mA
mA
µA
µA
V
V
V
V
V
V