CY14E256LA-SZ45XI Cypress Semiconductor Corp, CY14E256LA-SZ45XI Datasheet - Page 8

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CY14E256LA-SZ45XI

Manufacturer Part Number
CY14E256LA-SZ45XI
Description
IC NVSRAM 256KBIT 45NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of CY14E256LA-SZ45XI

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Operating Supply Voltage (typ)
5V
Package Type
SOIC
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
-40C to 85C
Pin Count
32
Mounting
Surface Mount
Supply Current
52mA
Memory Configuration
32K X 8
Access Time
45ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................–65 °C to +150 °C
Maximum accumulated storage time:
Ambient temperature with power applied..–55 °C to +150 °C
Supply voltage on V
Voltage applied to
outputs in high Z state ..........................–0.5 V to V
Input voltage........................................... –0.5 V to Vcc+0.5 V
DC Electrical Characteristics
Over the operating range (V
V
I
I
I
I
I
I
I
V
V
V
V
V
Parameter
Notes
CC1
CC2
CC3
CC4
SB
IX
OZ
8. Typical values are at 25 °C, V
9. The HSB pin has I
Document Number: 001-54952 Rev. *F
CC
IH
IL
OH
OL
CAP
[9]
This parameter is characterized but not tested.
At 150 °C ambient temperature........................ 1000 h
At 85 °C ambient temperature...................... 20 Years
Power supply
Average V
Average V
during STORE
Average V
t
V
Average V
during AutoStore cycle
V
Input leakage current
(except HSB)
Input leakage current
(for HSB)
Off-state output
leakage current
Input HIGH voltage
Input LOW voltage
Output HIGH voltage
Output LOW voltage
Storage capacitor
RC
CC
CC
= 200 ns,
(Typ), 25 °C
standby current
Description
OUT
CC
= –2 uA for V
CC
relative to V
CC
CC
CAP
current at
current
current
CC
current
CC
= V
= 4.5 V to 5.5 V)
CC
OH
(Typ). Not 100% tested.
of 2.4 V when both active high and low drivers are disabled. When they are enabled standard V
SS
t
t
Values obtained without output loads (I
All inputs don’t care, V
Average current for duration t
All inputs cycling at CMOS levels.
Values obtained without output loads (I
All inputs don’t care. Average current for duration t
CE > (V
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
V
V
V
I
I
Between V
RC
RC
OUT
OUT
........... –0.5 V to 7.0 V
CC
CC
CC
= 25 ns
= 45 ns
= Max, V
= Max, V
= Max, V
= –2 mA
= 4 mA
CC
CAP
– 0.2 V). V
CC
SS
SS
SS
pin and V
< V
+ 0.5 V
< V
< V
OUT
Test Conditions
IN
IN
IN
CC
< V
< V
< V
< 0.2 V or > (V
SS
= Max
CC
CC
CC
, 6 V rated
, CE or OE > V
STORE
Transient voltage (<20 ns) on
any pin to ground potential.................. –2.0 V to V
Package power dissipation
capability (T
Surface mount Pb soldering
temperature (3 seconds) ...........................................+260 °C
DC output current (1 output at a time, 1 s duration).....15 mA
Static discharge voltage ......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch up current .................................................... > 200 mA
Operating Range
Industrial
Range
OUT
OUT
CC
– 0.2 V).
A
= 0 mA)
= 0 mA).
IH
= 25 °C)...................................................1.0 W
or WE < V
Ambient Temperature
STORE
–40 °C to +85 °C
IL
V
–100
Min
4.5
2.0
0.5
2.4
SS
–1
–1
61
Typ
5.0
35
68
OH
[8]
CY14E256LA
and V
4.5 V to 5.5 V
V
OL
CC
Max
180
CC
5.5
0.8
0.4
70
52
10
+1
+1
+1
V
are valid.
8
8
+ 0.5
CC
Page 8 of 19
+ 2.0 V
Unit
mA
mA
mA
mA
mA
mA
μA
μA
μA
μF
V
V
V
V
V
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