CY14E256LA-SZ25XI Cypress Semiconductor Corp, CY14E256LA-SZ25XI Datasheet - Page 15

• Manufacturer Part Number: CY14E256LA-SZ25XI
• Description: IC NVSRAM 256KBIT 25NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14E256LA-SZ25XI

• Memory Size: 256K (32K x 8)
• Package / Case: *
• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Organization: 32 K x 8
• Access Time: 25 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Operating Current: 70 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Truth Table For SRAM Operations
HSB must remain HIGH for SRAM operations.
Part Numbering Nomenclature
Document Number: 001-54952 Rev. *D
Table 3. Truth Table
CY 14 E 256 L A-ZS 25 X I T
CE
H
L
L
L
Cypress
WE
H
H
X
L
14 - nvSRAM
OE
H
X
X
L
Voltage:
E - 5.0V
Die revision:
Blank - No Rev
A - 1
High Z
Data Out (DQ
High Z
Data in (DQ
Pb-Free
st
Rev
Inputs/Outputs
0
–DQ
0
–DQ
7
);
Option:
T - Tape & Reel
Blank - Std.
Package:
ZS - 44 TSOP II
SZ - 32 SOIC
7
);
Deselect/Power Down
Read
Output Disabled
Write
Temperature:
I - Industrial (-40 to 85
Data Bus:
L - x8
Mode
o
256 - 256 Kb
Density:
C)
Standby
Active
Active
Active
CY14E256LA
Speed:
25 - 25 ns
45 - 45 ns
Power
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