CAT28C256GI15 ON Semiconductor, CAT28C256GI15 Datasheet - Page 3

• Manufacturer Part Number: CAT28C256GI15
• Description: IC EEPROM 256KBIT 150NS 32PLCC
• Manufacturer: ON Semiconductor

Specifications of CAT28C256GI15

• Format - Memory: EEPROMs - Parallel
• Memory Type: EEPROM
• Memory Size: 256K (32K x 8)
• Speed: 150ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-PLCC
• Organization: 32 K x 8
• Interface Type: Parallel
• Access Time: 150 ns
• Output Enable Access Time: 70 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 30 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CAT28C256GI-15; CAT28C256GI-15

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
2. Output shorted for no more than one second. No more than one output shorted at a time.
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
5. V
6. V
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Temperature Under Bias
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
V
Package Power Dissipation Capability (T
Lead Soldering Temperature (10 secs)
Output Short Circuit Current (Note 2)
I
voltage on output pins is V
I
CC
I
CCC
SBC
V
V
LTH
ILC
IHC
IH
IL
Symbol
Symbol
with Respect to Ground
N
V
(Note 5)
T
(Note 6)
V
(Note 4)
V
V
= −0.3 V to +0.3 V.
I
(Note 5)
I
(Note 6)
I
= V
END
ZAP
CC
I
SB
LO
OH
DR
LI
OL
WI
CC
−0.3 V to V
Endurance
Data Retention
ESD Susceptibility
Latch−Up
V
V
V
V
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
CC
CC
CC
CC
Parameter
CC
Current (Operating, TTL)
Current (Operating, CMOS)
Current (Standby, TTL)
Current (Standby, CMOS)
CC
+ 0.3 V.
Parameters
+ 0.5 V, which may overshoot to V
Parameter
A
= 25°C)
MIL−STD−883, Test Method 1033
MIL−STD−883, Test Method 1008
MIL−STD−883, Test Method 3015
JEDEC Standard 17
(Note 3)
(V
Test Method
http://onsemi.com
CE = OE = V
f = 8 MHz, All I/O’s Open
CE = OE = V
f = 8 MHz, All I/O’s Open
CE = V
CE = V
V
V
CE = V
I
I
CC
OH
OL
IN
OUT
= 5 V ±10%, unless otherwise specified.)
= 2.1 mA
= GND to V
= −400 mA
= GND to V
Test Conditions
IH
IHC
IH
CC
, All I/O’s Open
3
, All I/O’s Open
+ 2.0 V for periods of less than 20 ns.
IL
ILC
,
CC
,
CC
,
–2.0 V to +V
100,000
2,000
−2.0 to +7.0
–55 to +125
–65 to +150
Min
100
100
Ratings
−0.3
Min
−10
−10
2.4
3.5
2
300
100
1.0
CC
+ 2.0 V
CC
Typ
Limits
+ 1 V.
Max
V
CC
Max
150
0.8
0.4
30
25
10
10
1
+ 0.3
Cycles/Byte
Units
Units
Years
mA
mA
°C
°C
°C
W
V
V
V
Units
mA
mA
mA
mA
mA
mA
V
V
V
V
V