UPD44646363AF5-E22-FQ1-A Renesas Electronics America, UPD44646363AF5-E22-FQ1-A Datasheet - Page 21

• Manufacturer Part Number: UPD44646363AF5-E22-FQ1-A
• Description: SRAM DDRII 72MBIT 165-PBGA
• Manufacturer: Renesas Electronics America

Specifications of UPD44646363AF5-E22-FQ1-A

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II+
• Memory Size: 72M (2M x 36)
• Speed: 450MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.5 Clock Cycles Read Latency
[
ODT state
DQ
Remarks 1. Q00 refers to output from address A0.
ODT state
BW#
μ
Address
PD44646093A-A], [
R, W#
QVLD
CQ#
LD#
DQ
CQ
K#
K
2. Outputs are disabled (high impedance) 3.5 clock cycles after the last READ (LD# = LOW, R, W# = HIGH)
3. When the ODT control pin is LOW or No Connect, the ODT function is always off.
Q01 refers to output from the next internal burst address following A0, etc.
is input in the sequences of [READ]-[NOP].
TKHKL
1
NOP
TIVKH
μ
TAVKH
PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A
TKLKH
μ
PD44646183A-A], [
A0
(burst of 2)
2
TKHCQX
Read Latency = 2.5 clock cycles
TKHCQV
TKHAX
READ
TKHKH
ODT-ON
TKHIX
TKHCQV
TKHCQX
A1
(burst of 2)
3
TKHK#H
READ
TKHCQX1
TCQHQVLD
4
Preliminary Data Sheet M19960EJ1V0DS
μ
NOP
TCQHQX
TCQHQV
PD44646363A-A]
TKHQX
TK#HKH
TKHQV
Q00
5
NOP
ODT-OFF
ODT-ON
Q01
TCQHQVLD
Q10
TKHQV
TCQHQX
TKHQX
6
NOP
TCQHQV
Q11
TKHQZ
A2
7
(burst of 2)
WRITE
TDVKH
A3
D20
8
(burst of 2)
TKHDX
WRITE
D21
TCQHCQ#H
TDVKH
ODT-ON
A4
D30
9
(burst of 2)
READ
D31
TKHDX
TCQ#HCQH
10
11
ODT-OFF
21