AT45DB011B-XI Atmel, AT45DB011B-XI Datasheet - Page 27
![IC FLASH 1MBIT 20MHZ 14TSSOP](/photos/7/29/72988/453-14-tssop_sml.jpg)
AT45DB011B-XI
Manufacturer Part Number
AT45DB011B-XI
Description
IC FLASH 1MBIT 20MHZ 14TSSOP
Manufacturer
Atmel
Datasheet
1.AT45DB011B-SC.pdf
(32 pages)
Specifications of AT45DB011B-XI
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
1M (512 pages x 264 bytes)
Speed
20MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
14-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 2. Algorithm for Randomly Modifying Data
Notes:
Sector Addressing
1984J–DFLASH–06/06
PA8
0
0
1
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase/program operations within that sector.
must use the address specified by the Page Address Pointer.
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
PA7
X
X
0
MAIN MEMORY PAGE PROGRAM
PA6
X
X
0
(82H)
PA5
to BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
X
X
Auto Page Rewrite
0
INCREMENT PAGE
START
(53H)
(58H)
END
provide address of
page to modify
PA4
MEMORY PAGE PROGRAM
(2)
0
X
X
(2)
BUFFER to MAIN
BUFFER WRITE
(84H)
(83H)
PA3
If planning to modify multiple
bytes currently stored within
a page of the Flash array
X
X
0
PA2 - PA0
X
X
X
AT45DB011B
Sector
0
1
2
27