AT45DB081B-RC Atmel, AT45DB081B-RC Datasheet - Page 27
![IC FLASH 8MBIT 20MHZ 28SOIC](/photos/6/82/68295/453-28-soic_sml.jpg)
AT45DB081B-RC
Manufacturer Part Number
AT45DB081B-RC
Description
IC FLASH 8MBIT 20MHZ 28SOIC
Manufacturer
Atmel
Datasheet
1.AT45DB081B-CC.pdf
(33 pages)
Specifications of AT45DB081B-RC
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
8M (4096 pages x 264 bytes)
Speed
20MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 2. Algorithm for Randomly Modifying Data
Notes:
Sector Addressing
2225J–DFLSH–2/08
PA11
0
0
0
0
1
1
1
1
•
•
•
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase/program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
PA10
0
0
0
0
0
0
1
1
•
•
•
PA9
0
0
0
1
0
1
0
1
•
•
•
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
PA8
X
X
X
X
X
0
0
1
•
•
•
(82H, 85H)
PA7
X
X
X
X
X
X
X
0
•
•
•
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
(53H, 55H)
(58H, 59H)
START
END
PA6
provide address of
page to modify
X
X
X
X
X
X
X
0
•
•
•
MEMORY PAGE PROGRAM
(2)
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
PA5
X
X
X
X
X
X
X
0
•
•
•
If planning to modify multiple
bytes currently stored within
a page of the Flash array
PA4
X
X
X
X
X
X
X
0
•
•
•
PA3
X
X
X
X
X
X
X
0
•
•
•
AT45DB081B
PA2 - PA0
X
X
X
X
X
X
X
X
•
•
•
Sector
0
1
2
3
6
7
8
9
•
•
•
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