AT45DB161D-MU Atmel, AT45DB161D-MU Datasheet - Page 24

• Manufacturer Part Number: AT45DB161D-MU
• Description: IC FLASH 16MBIT 66MHZ 8VDFN
• Manufacturer: Atmel

Specifications of AT45DB161D-MU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (4096 pages x 528 bytes)
• Speed: 66MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which
commands can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should
not be started. However, during the internally self-timed portion of Group B commands, any command in Group C
can be executed. The Group B commands using buffer 1 should use Group C commands using buffer 2 and vice
versa. Finally, during the internally self-timed portion of a Group D command, only the Status Register Read
command should be executed.
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer 1 (or 2)
10. Auto Page Rewrite
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
4. Manufacturer and Device ID Read
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
Atmel AT45DB161D
3500N–DFLASH–05/10