AT45DB041D-SU Atmel, AT45DB041D-SU Datasheet - Page 40

• Manufacturer Part Number: AT45DB041D-SU
• Description: IC FLASH 4MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB041D-SU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 4M (2048 pages x 264 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Density: 4Mb
• Access Time (max): 6ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC EIAJ
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 8
• Architecture: Sectored
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 264 B
• Current, Input, Leakage: 1 μA
• Current, Operating: 10 mA (Read), 12 mA (Program/Erase)
• Current, Output, Leakage: 1
• Data Retention: 20 yrs.
• Temperature, Operating: -40 to +85 °C
• Time, Access: 6 ns
• Time, Address Hold: 5
• Time, Address Setup: 5
• Time, Fall: 6.8 ns
• Time, Rise: 6.8 ns
• Voltage, Input, High: 1.89 to 2.52 V
• Voltage, Input, Low: 0.81 to 1.08 V
• Voltage, Output, High: 2.5 to 3.4 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.7 to 3.6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

22. Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
22.1
22.2
40
SI (INPUT)
Buffer Write
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
CS
AT45DB041D
SI (INPUT)
CS
represents 8 bits
PAGE (256/264 BYTES)
Each transition
CMD
X
16 DON'T CARE + BFA7-BFA0
CMD
BINARY PAGE SIZE
PAGE PROGRAM
X···X, BFA8
BUFFER (256/264 BYTES)
MAIN MEMORY
FLASH MEMORY ARRAY
BUFFER TO
BUFFER
I/O INTERFACE
WRITE
PA10-7
Starts self-timed erase/program operation
BFA7-0
SI
A18-A8 + 8 DON'T CARE BITS
BINARY PAGE SIZE
n
PA6-0, X
Completes writing into selected buffer
n+1
XXXX XX
n = 1st byte read
n+1 = 2nd byte read
Last Byte
3595P–DFLASH–09/09