MT46V16M16TG-6T L:F TR Micron Technology Inc, MT46V16M16TG-6T L:F TR Datasheet - Page 77
![IC DDR SDRAM 256MBIT 6NS 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V16M16TG-6T L:F TR
Manufacturer Part Number
MT46V16M16TG-6T L:F TR
Description
IC DDR SDRAM 256MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16TG-6T L:F TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1019-1
MT46V16M16TG-6T L:F
MT46V16M16TG-6T L:F
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Figure 39:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
t DQSS (NOM)
Command
Consecutive WRITE-to-WRITE
Address
DQS
CK#
DM
Notes:
DQ
CK
WRITE
Bank,
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
Col b
T0
t DQSS
NOP
DI
T1
b
T1n
WRITE
Bank,
Col n
T2
75
T2n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T3
DI
n
T3n
Transitioning Data
256Mb: x4, x8, x16 DDR SDRAM
NOP
T4
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
NOP
Don’t Care
Operations
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