MT48LC16M4A2TG-75:G TR Micron Technology Inc, MT48LC16M4A2TG-75:G TR Datasheet - Page 48

IC SDRAM 64MBIT 133MHZ 54TSOP

MT48LC16M4A2TG-75:G TR

Manufacturer Part Number
MT48LC16M4A2TG-75:G TR
Description
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48LC16M4A2TG-75:G TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (16Mx4)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1066-1
MT48LC16M4A2TG-75:G
Table 18:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
AC Characteristics
Parameter
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold
time
CS#, RAS#, CAS#, WE#, DQM setup
time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (4,096 rows)
Refresh period–Automotive
(4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE
command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11, 34 apply to entire table; notes appear on pages 50 and 51; V
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
t
t
t
REF
AC(3)
AC(2)
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
t
t
CMH
OHN
t
t
t
t
t
t
CKH
CMS
RCD
RRD
t
t
RAS
t
t
CKS
RFC
t
XSR
t
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
AT
1 CLK
+ 6ns
Min
1.5
2.5
2.5
1.5
1.5
1.5
1.8
0.3
42
60
18
60
18
12
12
70
1
6
1
1
1
1
2
-6
120,000
Max
48
5.5
5.5
1.2
64
16
1 CLK
+ 7ns
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1
3
-7E
120,000
Max
5.4
5.4
5.4
5.4
1.2
64
16
+ 7.5ns
1 CLK
64Mb: x4, x8, x16 SDRAM
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
10
66
20
15
44
20
66
15
75
1
3
Electrical Specifications
-75
DD
120,000
©2000 Micron Technology, Inc. All rights reserved.
Max
, V
5.4
5.4
1.2
64
16
6
6
DD
Q = +3.3V ±0.3V
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
27
23
23
10
10
28
24
25
20
7

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